A numerical study of dc characteristics of HEMT with p-type delta-doped barrier

doi:10.1007/s00339-004-2899-0

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DC 欄位	值	語言
dc.contributor.author	Chang, Y	en_US
dc.contributor.author	Kuo, YK	en_US
dc.date.accessioned	2014-12-08T15:18:25Z	-
dc.date.available	2014-12-08T15:18:25Z	-
dc.date.issued	2005-09-01	en_US
dc.identifier.issn	0947-8396	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00339-004-2899-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13284	-
dc.description.abstract	The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type delta-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.	en_US
dc.language.iso	en_US	en_US
dc.title	A numerical study of dc characteristics of HEMT with p-type delta-doped barrier	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00339-004-2899-0	en_US
dc.identifier.journal	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING	en_US
dc.citation.volume	81	en_US
dc.citation.issue	4	en_US
dc.citation.spage	877	en_US
dc.citation.epage	879	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000230267700039	-
dc.citation.woscount	0	-
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