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dc.contributor.authorChang, Chi-Hsiangen_US
dc.contributor.authorChang, Shu-Weien_US
dc.contributor.authorWu, Chao-Hsinen_US
dc.date.accessioned2019-04-03T06:37:25Z-
dc.date.available2019-04-03T06:37:25Z-
dc.date.issued2016-10-31en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.24.025515en_US
dc.identifier.urihttp://hdl.handle.net/11536/132872-
dc.description.abstractCompared with typical diode lasers (DLs), transistor lasers (TLs) support not only current-controlled but also voltage-controlled modulation. In this work, we theoretically investigate the small-signal voltage modulation of TLs based on the Franz-Keldysh (F-K) absorption and related optoelectronic feedback. In addition to the conventional rate equations relevant to DLs, our model physically includes various F-K effects. An optically induced current due to the F-K absorption may dramatically alter the voltage response of TLs. A model composed of the intrinsic optical response and an electrical transfer function which is fed back by this optical response is proposed to explain the true behaviors of voltage modulation in TLs. (C) 2016 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleTheory for voltage modulation of transistor lasers using Franz-Keldysh absorption in the presence of optoelectronic feedbacken_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.24.025515en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume24en_US
dc.citation.issue22en_US
dc.citation.spage25515en_US
dc.citation.epage25527en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000388413400082en_US
dc.citation.woscount2en_US
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