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dc.contributor.authorLiao, HHen_US
dc.contributor.authorMeng, HFen_US
dc.contributor.authorHorng, SFen_US
dc.contributor.authorShy, JTen_US
dc.contributor.authorChen, Ken_US
dc.contributor.authorHsu, CSen_US
dc.date.accessioned2019-04-03T06:42:51Z-
dc.date.available2019-04-03T06:42:51Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.72.113203en_US
dc.identifier.urihttp://hdl.handle.net/11536/13287-
dc.description.abstractWe study the triplet excitons in poly (9,9-dioctylfluorene-2,7-diyl) light-emitting diode using infrared induced absorption. The infrared absorption is exclusively due to the triplet excitons and there is no spectral overlap with any other species. A strong suppression of the triplet exciton density relative to the singlet by voltage is observed. Through an unique independent measurement on the triplet exciton lifetime it is shown that the suppression solely comes from triplet exciton quenching by current injection. The triplet-to-singlet exciton formation ratio is independent of voltage as well as temperature, implying a spin-independent exciton formation.en_US
dc.language.isoen_USen_US
dc.titleTriplet exciton formation and decay in polyfluorene light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.72.113203en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume72en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000232229100016en_US
dc.citation.woscount13en_US
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