完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Zhong, Chia-Wen | en_US |
dc.contributor.author | Lin, Horng-Chih | en_US |
dc.contributor.author | Liu, Kou-Chen | en_US |
dc.contributor.author | Huang, Tiao-Yuan | en_US |
dc.date.accessioned | 2017-04-21T06:55:48Z | - |
dc.date.available | 2017-04-21T06:55:48Z | - |
dc.date.issued | 2016-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.55.016501 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/132896 | - |
dc.description.abstract | In this work, we study the properties of tin oxide films, which were annealed in oxygen ambient for various periods. The as-deposited tin oxides are tin-dominant and, from the Hall measurements, they are of the n-type with high electron concentrations (>10(19) cm(-3)) and would change to the p-type when the oxygen annealing is sufficiently long. We have also found that changes in the structure and crystallinity of the channel layer can be clearly observed by X-ray diffraction analysis and optical microscopy. On the basis of the observations, a physical scheme is proposed to describe the evolution of the electrical performance of oxygen-annealed devices. A hole mobility of 3.24 cm(2) V-1 s(-1), a subthreshold swing of 0.43V/dec, a threshold voltage of 1.4V, and an on/off current ratio larger than 10(3) are obtained as the channel is transformed into SnO. (C) 2016 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistors | en_US |
dc.identifier.doi | 10.7567/JJAP.55.016501 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 55 | en_US |
dc.citation.issue | 1 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000369001600034 | en_US |
顯示於類別: | 期刊論文 |