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dc.contributor.authorLin, Yen-Tingen_US
dc.contributor.authorSingh, Ranjodhen_US
dc.contributor.authorKuo, Shiao-Weien_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2017-04-21T06:55:26Z-
dc.date.available2017-04-21T06:55:26Z-
dc.date.issued2017-02en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2016.11.008en_US
dc.identifier.urihttp://hdl.handle.net/11536/132949-
dc.description.abstractWe have developed a strategy for modifying the channel layer of organic thin film transistors (OTFTs) through side-chain induced self-organization into a well-ordered film. To obtain selectively self-patterned layers, we treated an adenine-functionalized poly(3-hexylthiophene) (PAT) with adenosine triphosphate (ATP). Using this strategy, interchain charge transport resulting from pi-conjugation was selected to control the polymer morphology, without the need of additional chemical synthetic processing. The side chain-induced self-organization can be understood in terms of supramolecular interactions. The pi-electrons were delocalized among the thiophene rings, thereby improving the interchain charge transport ability; the resulting planar pi-electron system in PAT: ATP resulted in closer intermolecular pep distances, facilitating enhanced charge carrier mobility within a fibrillar structure. The PAT: ATP-based OTFT device exhibited moderate to improved electronic characteristics, with an average field mobility of 3.2 x 10(-4) cm(2) V-1 s(-1) at -30 V and a threshold voltage (V-th) of 5 V, and an on/off current ratio of 10(6). This method has great potential for inducing selective intermolecular interactions in fully solution processed electronic devices. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInterchain charge transporten_US
dc.subjectSide chain-induced self-organizationen_US
dc.subjectSelf-assemblyen_US
dc.subjectOTFTsen_US
dc.titleSupramolecular control over the morphology of bio-inspired poly(3-hexylthiophene) for organic thin film transistorsen_US
dc.identifier.doi10.1016/j.orgel.2016.11.008en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume41en_US
dc.citation.spage221en_US
dc.citation.epage228en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000390586300030en_US
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