完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shalan, Ahmed Esmail | en_US |
dc.contributor.author | Oshikiri, Tomoya | en_US |
dc.contributor.author | Narra, Sudhakar | en_US |
dc.contributor.author | Elshanawany, Mahmoud M. | en_US |
dc.contributor.author | Ueno, Kosei | en_US |
dc.contributor.author | Wu, Hui-Ping | en_US |
dc.contributor.author | Nakamura, Keisuke | en_US |
dc.contributor.author | Shi, Xu | en_US |
dc.contributor.author | Diau, Eric Wei-Guang | en_US |
dc.contributor.author | Misawa, Hiroaki | en_US |
dc.date.accessioned | 2017-04-21T06:55:27Z | - |
dc.date.available | 2017-04-21T06:55:27Z | - |
dc.date.issued | 2016-12-14 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsami.6b10803 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/132970 | - |
dc.description.abstract | CoOx is a promising hole-extracting layer (HEL) for inverted planar perovskite solar cells with device configuration ITO/CoOx/CH3NH3PbI3/PCBM/Ag. The devices fabricated according to a simple solution procedure showed the best photovoltaic performance attaining power conversion efficiency (PCE) of 14.5% under AM 1.5 G 1 sun irradiation, which is significantly superior to those of materials fabricated with a traditional HEL such as PEDOT:PSS (12.2%), NiOx (10.2%), and CuOx (9.4%) under the same experimental conditions. We characterized the chemical compositions with XPS, crystal structures with XRD, and film morphology with SEM/AFM techniques. Photoluminescence (PL) spectra and the corresponding PL decays for perovskite deposited on varied HEL films were recorded to obtain the hole-extracting characteristics, for which the hole extracting times show the order CoOx (2.8 ns) < PEDOT:PSS (17.5 ns) < NiOx (22.8 ns) < CuOx (208.5 ns), consistent with the trend of their photovoltaic performances. The reproducibility and enduring stability of those devices were examined to show the outstanding long-term stability of the devices made of metal oxide HEL, for which the CoOx device retained PCE approximate to 12% for over 1000 h. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | cobalt oxide | en_US |
dc.subject | hole-extraction layer | en_US |
dc.subject | perovskite solar cell | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | photovoltaic devices | en_US |
dc.title | Cobalt Oxide (CoOx) as an Efficient Hole-Extracting Layer for High Performance Inverted Planar Perovskite Solar Cells | en_US |
dc.identifier.doi | 10.1021/acsami.6b10803 | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 49 | en_US |
dc.citation.spage | 33592 | en_US |
dc.citation.epage | 33600 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 應用化學系分子科學碩博班 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Institute of Molecular science | en_US |
dc.identifier.wosnumber | WOS:000389963300028 | en_US |
顯示於類別: | 期刊論文 |