完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, Chia-Chinen_US
dc.contributor.authorLu, Ang-Yuen_US
dc.contributor.authorTseng, Chien-Chihen_US
dc.contributor.authorYang, Xiulinen_US
dc.contributor.authorHedhili, Mohamed Nejiben_US
dc.contributor.authorChen, Min-Chengen_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2017-04-21T06:55:24Z-
dc.date.available2017-04-21T06:55:24Z-
dc.date.issued2016-12en_US
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nanoen.2016.09.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/132988-
dc.description.abstractTwo-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach using a remote hydrogen-plasma process to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H-2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. (C) 2016 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHydrogen evolution reactionen_US
dc.subjectMoS2en_US
dc.subjectElectrolysisen_US
dc.subjectCatalysisen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.titleActivating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasmaen_US
dc.identifier.doi10.1016/j.nanoen.2016.09.010en_US
dc.identifier.journalNANO ENERGYen_US
dc.citation.volume30en_US
dc.citation.spage846en_US
dc.citation.epage852en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000390636100097en_US
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