標題: Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
作者: Sa Hoang Huynh
Minh Thien Huu Ha
Huy Binh Do
Tuan Anh Nguyen
Quang Ho Luc
Chang, Edward Yi
材料科學與工程學系
電機學院
國際半導體學院
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
International College of Semiconductor Technology
公開日期: 9-Jan-2017
摘要: The ternary InxGa1-xSb epilayers grown on GaAs substrates by metalorganic chemical vapor deposition using a GaSb buffer layer have been demonstrated. High-resolution transmission electron microscopy micrographs illustrate an entirely relaxed GaSb buffer grown by the interfacial misfit dislocation growth mode. A high quality In0.15Ga0.85Sb epilayer was obtained on the GaSb surface with the very low threading dislocation densities (similar to 8.0 x 10(6) cm(-2)) and the surface roughness was 0.87 nm. The indium content of the InxGa1-xSb epilayer depends significantly on the growth temperature and approaches to a saturated value of 15% when the growth temperature was above 580 degrees C. Based on the X-ray photoelectron spectroscopy analyses, the valence band offset and the conduction band offset of Al2O3 with the In0.15Ga0.85Sb/GaSb/GaAs heterostructure are 3.26 eV and 2.91 eV, respectively. In addition, from the O1s energy-loss spectrum analysis, the band gap of Al2O3 is found to be similar to 6.78+/-0.05 eV. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4973998
http://hdl.handle.net/11536/133042
ISSN: 0003-6951
DOI: 10.1063/1.4973998
期刊: APPLIED PHYSICS LETTERS
Volume: 110
Issue: 2
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