Full metadata record
DC FieldValueLanguage
dc.contributor.authorTsao, Yu-Chingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChiang, Hsiao-Chengen_US
dc.contributor.authorChen, Guan-Fuen_US
dc.contributor.authorChien, Yu-Chiehen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorYang, Chung-Yien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.date.accessioned2017-04-21T06:55:14Z-
dc.date.available2017-04-21T06:55:14Z-
dc.date.issued2017-01-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4973856en_US
dc.identifier.urihttp://hdl.handle.net/11536/133043-
dc.description.abstractThis work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleAbnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistorsen_US
dc.identifier.doi10.1063/1.4973856en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume110en_US
dc.citation.issue2en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000392835300054en_US
Appears in Collections:Articles