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dc.contributor.authorWang, Wei-Hsiangen_US
dc.contributor.authorLyu, Syue-Ruen_US
dc.contributor.authorHeredia, Elicaen_US
dc.contributor.authorLiu, Shu-Haoen_US
dc.contributor.authorJiang, Pei-Hsunen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.date.accessioned2017-04-21T06:55:14Z-
dc.date.available2017-04-21T06:55:14Z-
dc.date.issued2017-01-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4974080en_US
dc.identifier.urihttp://hdl.handle.net/11536/133044-
dc.description.abstractWe have investigated the gate-voltage dependence and the temperature dependence of the magneto-conductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleCompeting weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistorsen_US
dc.identifier.doi10.1063/1.4974080en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume110en_US
dc.citation.issue2en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000392835300036en_US
Appears in Collections:Articles