标题: Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors
作者: Wang, Wei-Hsiang
Lyu, Syue-Ru
Heredia, Elica
Liu, Shu-Hao
Jiang, Pei-Hsun
Liao, Po-Yung
Chang, Ting-Chang
Chen, Hua-Mao
光電工程學系
Department of Photonics
公开日期: 9-一月-2017
摘要: We have investigated the gate-voltage dependence and the temperature dependence of the magneto-conductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4974080
http://hdl.handle.net/11536/133044
ISSN: 0003-6951
DOI: 10.1063/1.4974080
期刊: APPLIED PHYSICS LETTERS
Volume: 110
Issue: 2
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