Full metadata record
DC FieldValueLanguage
dc.contributor.authorChiang, Kuo-Changen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2017-04-21T06:55:15Z-
dc.date.available2017-04-21T06:55:15Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2016.11.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/133050-
dc.description.abstractInfluence of blocking oxide layer types on the performance of nonvolatile floating gate memory (NFGM) containing AgInSbTe (AIST)-SiO2 nanocomposite as the charge-trapping layer was investigated. In the NFGM containing a 7-nm thick SiO2 blocking oxide layer deposited by plasma-enhanced chemical vapor deposition (PECVD), a fairly large memory window (Delta V-FB) shift of 20.9 V with the charge density of 13 x 10(13) cm(-2) at +/- 15 V gate voltage sweep was achieved. As to the NFGM containing HfO2 blocking oxide layer, the device performance was inferior to that of PECVD-SiO2 device due to the diffusion of HfO2 into the nanocomposite layer. Interdiffusion resulted in the formation of HfSiOx phase and oxygen defects which might act as the leakage paths, consequently deteriorating the charge trapping efficiency of AIST nanocrystals (NCs) embedded in nanocomposite layer. Analytical results illustrated that the film quality and barrier height feature of blocking oxide layer are essential to form the deep trap sites in the programming layer to achieve a satisfactory NFGM performance with long-term reliability. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectChalcogenidesen_US
dc.subjectAgInSbTeen_US
dc.subjectBlocking oxide layeren_US
dc.subjectNonvolatile floating gate memoryen_US
dc.titleEffects of blocking oxide layer types on the performance of nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite thin filmsen_US
dc.identifier.doi10.1016/j.tsf.2016.11.030en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume621en_US
dc.citation.spage63en_US
dc.citation.epage69en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000392681900012en_US
Appears in Collections:Articles