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dc.contributor.authorChang, Cheng-Yien_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorLin, Jian-Siangen_US
dc.contributor.authorYu, Tung-Yuanen_US
dc.contributor.authorLi, Yi-Mingen_US
dc.contributor.authorChen, Chieh-Yangen_US
dc.date.accessioned2017-04-21T06:56:42Z-
dc.date.available2017-04-21T06:56:42Z-
dc.date.issued2016-12-21en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4972029en_US
dc.identifier.urihttp://hdl.handle.net/11536/133076-
dc.description.abstractWe fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/mu m. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/mu m. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleLateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppressionen_US
dc.identifier.doi10.1063/1.4972029en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume120en_US
dc.citation.issue23en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000391685500021en_US
Appears in Collections:Articles