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dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorLin, Jheng-Cyuanen_US
dc.contributor.authorFang, Yue-Wenen_US
dc.contributor.authorWang, Jing-Chingen_US
dc.contributor.authorHuang, Bo-Chaoen_US
dc.contributor.authorGao, Xiangen_US
dc.contributor.authorHuang, Rongen_US
dc.contributor.authorDean, Philip R.en_US
dc.contributor.authorHatton, Peter D.en_US
dc.contributor.authorChin, Yi-Yingen_US
dc.contributor.authorLin, Hong-Jien_US
dc.contributor.authorChen, Chien-Teen_US
dc.contributor.authorIkuhara, Yuichien_US
dc.contributor.authorChiu, Ya-Pingen_US
dc.contributor.authorChang, Chia-Sengen_US
dc.contributor.authorDuan, Chun-Gangen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2017-04-21T06:56:39Z-
dc.date.available2017-04-21T06:56:39Z-
dc.date.issued2016-11-02en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.201602281en_US
dc.identifier.urihttp://hdl.handle.net/11536/133097-
dc.description.abstractA novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.en_US
dc.language.isoen_USen_US
dc.titleA Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructureen_US
dc.identifier.doi10.1002/adma.201602281en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume28en_US
dc.citation.issue41en_US
dc.citation.spage9142en_US
dc.citation.epage+en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000391174400009en_US
Appears in Collections:Articles