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dc.contributor.authorYen, Po-Jenen_US
dc.contributor.authorTing, Chao-Chien_US
dc.contributor.authorChiu, Yung-Chien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorHsu, Yao-Janeen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.date.accessioned2017-04-21T06:56:33Z-
dc.date.available2017-04-21T06:56:33Z-
dc.date.issued2017-03-14en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c6tc03128een_US
dc.identifier.urihttp://hdl.handle.net/11536/133135-
dc.description.abstractIn this paper we report a facile and rapid electrochemical process, involving simultaneous in situ cathodic plasma exfoliation and nitrogen doping, for the production of nitrogen-doped graphene nanosheets. We used a novel electrochemical process to generate the plasma in situ: a graphite rod, serving as a cathode, generated in situ cathodic plasma when it came into slight contact with the electrolyte containing proper nitrogen species that can undergo dissociation with plasma and then form bonds with carbon such as ammonia molecules or nitrate/nitrite anions, resulting in induced exfoliation of the tip of the graphite rod into nitrogen-doped graphene nanosheets. X-ray photoelectron spectroscopy, elemental analysis, and energy-dispersive X-ray spectroscopy revealed that the concentration of nitrogen atoms doped in the graphene nanosheets varied from 0.6 to 0.81 at%. Transmission electron microscopy and scanning electron microscopy revealed that the as-produced nitrogen-doped graphene nanosheets comprised four layers of graphene and had a specific surface area of 164 m(2) g(-1). This process has potential for use in the industrial-scale mass production of nitrogen-doped graphene for various applications.en_US
dc.language.isoen_USen_US
dc.titleFacile production of graphene nanosheets comprising nitrogen-doping through in situ cathodic plasma formation during electrochemical exfoliationen_US
dc.identifier.doi10.1039/c6tc03128een_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume5en_US
dc.citation.issue10en_US
dc.citation.spage2597en_US
dc.citation.epage2602en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000396293400014en_US
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