標題: | Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography |
作者: | Wang, Sheng-Wen Hong, Kuo-Bin Tsai, Yu-Lin Teng, Chu-Hsiang Tzou, An-Jye Chu, You-Chen Lee, Po-Tsung Ku, Pei-Cheng Lin, Chien-Chung Kuo, Hao-Chung 光電系統研究所 光電工程學系 光電工程研究所 Institute of Photonic System Department of Photonics Institute of EO Enginerring |
公開日期: | 3-三月-2017 |
摘要: | In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated. |
URI: | http://dx.doi.org/10.1038/srep42962 http://hdl.handle.net/11536/133139 |
ISSN: | 2045-2322 |
DOI: | 10.1038/srep42962 |
期刊: | SCIENTIFIC REPORTS |
Volume: | 7 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |