The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics

Abstract

A Ti-doped Y2O3(Y2Ti2O5) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y2O3. The performance of high-k Y2O3 and Y2Ti2O5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y2O3 dielectric imparts improvements in the structural and electrical performance of the material. The Y2Ti2O5 dielectric with 800 degrees C annealing treatment has the best performance among all the samples tested.