完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yan, Po-Ruei | en_US |
dc.contributor.author | Huang, Wei-Jie | en_US |
dc.contributor.author | Yang, Sheng-Hsiung | en_US |
dc.date.accessioned | 2017-04-21T06:56:19Z | - |
dc.date.available | 2017-04-21T06:56:19Z | - |
dc.date.issued | 2017-02 | en_US |
dc.identifier.issn | 0009-2614 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.cplett.2016.12.036 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133200 | - |
dc.description.abstract | In this research, three quaternary ammonium salts containing different counterions, including tetrabutylammonium bromide (TBABr), tetrabutylammonium tetrafluoroborate (TBABF(4)), and tetrabutylammonium hexafluorophosphate (TBAPF(6)), were incorporated into [6,6]-phenyl-C-61 butyric acid methyl ester (PCBM) as electron transporting layer (ETL). These salts-doped PCBM films revealed higher electron mobility and Fermi levels compared with the un-doped one. Better charge transfer at the interface between perovskite and salts-doped PCBM was also obtained from PL quenching experiments. Inverted perovskite solar cells with the configuration of ITO/PEDOT:PSS/CH3NH3PbI3/PCBM + salts/Ag were fabricated, and the J(SC) and FF of devices were significantly enhanced using salts-doped PCBM as ETL. The best device based on TBABF(4)-doped PCBM delivered a power conversion efficiency (PCE) up to 13.41%, which was superior to the one with undoped PCBM layer (PCE = 8.77%). (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Quaternary ammonium salts | en_US |
dc.subject | Counterions | en_US |
dc.subject | Electron transporting layers | en_US |
dc.subject | Inverted perovskite solar cells | en_US |
dc.title | Incorporation of quaternary ammonium salts containing different counterions to improve the performance of inverted perovskite solar cells | en_US |
dc.identifier.doi | 10.1016/j.cplett.2016.12.036 | en_US |
dc.identifier.journal | CHEMICAL PHYSICS LETTERS | en_US |
dc.citation.volume | 669 | en_US |
dc.citation.spage | 143 | en_US |
dc.citation.epage | 149 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000392774900022 | en_US |
顯示於類別: | 期刊論文 |