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dc.contributor.authorWu, Chien-Teen_US
dc.contributor.authorAnderson, Brandon M.en_US
dc.contributor.authorHsiao, Wei-Hanen_US
dc.contributor.authorLevin, K.en_US
dc.date.accessioned2019-04-03T06:36:33Z-
dc.date.available2019-04-03T06:36:33Z-
dc.date.issued2017-01-24en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.95.014519en_US
dc.identifier.urihttp://hdl.handle.net/11536/133206-
dc.description.abstractWe show that topological phases should be realizable in readily available and well-studied heterostructures. In particular we identify a new class of topological materials which are well known in spintronics: helical ferromagnet-superconducting junctions. We note that almost all previous work on topological heterostructures has focused on creating Majorana modes at the proximity interface in effectively two-dimensional or one-dimensional systems. The particular heterostructures we address exhibit finite-range proximity effects leading to nodal superconductors with Majorana modes localized well away from this interface. To show this, we implement a Bogoliubov-de Gennes (BdG) proximity numerical scheme, which importantly involves two finite dimensions in a three-dimensional junction. Incorporating this level of numerical complexity serves to distinguish ours from alternative numerical BdG approaches which are limited by generally assuming translational invariance or periodic boundary conditions along multiple directions. With this access to the edges, we are then able to illustrate in a concrete fashion the wave functions of Majorana zero modes and, moreover, address finite-size effects. In the process we establish consistency with a simple analytical model.en_US
dc.language.isoen_USen_US
dc.titleMajorana zero modes in spintronics devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.95.014519en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume95en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000395503600006en_US
dc.citation.woscount5en_US
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