標題: | Non-Volatile Flash Memory Characteristics of Tetralayer Nickel-Germanide Nanocrystals Embedded Structure |
作者: | Panda, D. Panda, M. 電機學院 College of Electrical and Computer Engineering |
關鍵字: | Flash Memory;Non-Volatile;Nickel Germanide;Nanocrystals;High k Dielectrics |
公開日期: | 一月-2016 |
摘要: | Formation of tetralayer memory structure having nickel-germanide nanocrystals using a Ge/Ni multilayers is proposed. X-ray diffraction study shows the NiGe (002) phase formation after proper annealing. Cross sectional HRTEM clearly shows the sharpness and the size (similar to 4-6 nm) of the stacked nanocrystals embedded in the oxide matrix. A large anti-clockwise hysteresis memory window of 13.4 Volt at +/- 15 Volt is observed for the optimized samples. This large memory window indicates for the MLC applications. Frequency independent C-V curve confirms about the charge storage in the nanocrystals. A good charge retention and endurance characteristics are exhibited upto 125 degrees C for the nonvolatile memory application. |
URI: | http://dx.doi.org/10.1166/jnn.2016.11047 http://hdl.handle.net/11536/133263 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2016.11047 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 16 |
Issue: | 1 |
起始頁: | 1216 |
結束頁: | 1219 |
顯示於類別: | 期刊論文 |