標題: Non-Volatile Flash Memory Characteristics of Tetralayer Nickel-Germanide Nanocrystals Embedded Structure
作者: Panda, D.
Panda, M.
電機學院
College of Electrical and Computer Engineering
關鍵字: Flash Memory;Non-Volatile;Nickel Germanide;Nanocrystals;High k Dielectrics
公開日期: 一月-2016
摘要: Formation of tetralayer memory structure having nickel-germanide nanocrystals using a Ge/Ni multilayers is proposed. X-ray diffraction study shows the NiGe (002) phase formation after proper annealing. Cross sectional HRTEM clearly shows the sharpness and the size (similar to 4-6 nm) of the stacked nanocrystals embedded in the oxide matrix. A large anti-clockwise hysteresis memory window of 13.4 Volt at +/- 15 Volt is observed for the optimized samples. This large memory window indicates for the MLC applications. Frequency independent C-V curve confirms about the charge storage in the nanocrystals. A good charge retention and endurance characteristics are exhibited upto 125 degrees C for the nonvolatile memory application.
URI: http://dx.doi.org/10.1166/jnn.2016.11047
http://hdl.handle.net/11536/133263
ISSN: 1533-4880
DOI: 10.1166/jnn.2016.11047
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 16
Issue: 1
起始頁: 1216
結束頁: 1219
顯示於類別:期刊論文