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dc.contributor.authorWang, MTen_US
dc.contributor.authorYeh, WKen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorTseng, WTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorChen, LJen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2017-04-21T06:56:10Z-
dc.date.available2017-04-21T06:56:10Z-
dc.identifier.urihttp://hdl.handle.net/11536/133280-
dc.description.abstractThis work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectselective tungsten chemical vapor depositionen_US
dc.subjectchemical mechanical polishingen_US
dc.subjectremoval rate selectivityen_US
dc.titleChemical mechanical polishing for selective CVD-Wen_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:&DestLinkType=Fen_US
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