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dc.contributor.authorChiu, Shao-Pinen_US
dc.contributor.authorYeh, Sheng-Shiuanen_US
dc.contributor.authorChiou, Chien-Jyunen_US
dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.contributor.authorTsuei, Chang-Chyien_US
dc.date.accessioned2017-04-21T06:56:16Z-
dc.date.available2017-04-21T06:56:16Z-
dc.date.issued2017-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsnano.6b06553en_US
dc.identifier.urihttp://hdl.handle.net/11536/133328-
dc.description.abstractHigh-precision resistance noise measurements indicate that the epitaxial CoSi2/Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature T-c of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant gamma <= 3 X 10(-6), about 100 times lower than that of single-crystalline aluminum films on SiO2 capped Si substrates. Supported by high -resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi2/Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing.en_US
dc.language.isoen_USen_US
dc.subjectsuperconducting silicide/silicon heterostructureen_US
dc.subjectinterfacial dynamic defectsen_US
dc.subject1/f resistance noiseen_US
dc.subjectdimer reconstructionen_US
dc.subjecttwo-level-system fluctuatorsen_US
dc.titleUltralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Siliconen_US
dc.identifier.doi10.1021/acsnano.6b06553en_US
dc.identifier.journalACS NANOen_US
dc.citation.volume11en_US
dc.citation.issue1en_US
dc.citation.spage516en_US
dc.citation.epage525en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000392886500052en_US
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