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dc.contributor.authorLee, WZen_US
dc.contributor.authorShu, GWen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorShen, JLen_US
dc.contributor.authorLin, CAen_US
dc.contributor.authorChang, WHen_US
dc.contributor.authorRuaan, RCen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorLu, CHen_US
dc.contributor.authorLee, YCen_US
dc.date.accessioned2014-12-08T15:18:32Z-
dc.date.available2014-12-08T15:18:32Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/16/9/018en_US
dc.identifier.urihttp://hdl.handle.net/11536/13340-
dc.description.abstractRecombination dynamics of photoluminescence (PL) in colloidal CdSe/ZnS quantum dots (QDs) were studied using time-resolved PL measurements. The PL intensity shows a biexponential decay at 9 K, consisting of a fast component (similar to 1 ns) and a slow component (similar to 6.3 ns). Based on the emission-energy and temperature dependence of carrier lifetimes, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs originates from recombination of the delocalized carriers in the internal core states and the localized carriers at the interface, respectively.en_US
dc.language.isoen_USen_US
dc.titleRecombination dynamics of luminescence in colloidal CdSe/ZrS quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/16/9/018en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume16en_US
dc.citation.issue9en_US
dc.citation.spage1517en_US
dc.citation.epage1521en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000232089500018-
dc.citation.woscount34-
Appears in Collections:Articles


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