完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, WZ | en_US |
dc.contributor.author | Shu, GW | en_US |
dc.contributor.author | Wang, JS | en_US |
dc.contributor.author | Shen, JL | en_US |
dc.contributor.author | Lin, CA | en_US |
dc.contributor.author | Chang, WH | en_US |
dc.contributor.author | Ruaan, RC | en_US |
dc.contributor.author | Chou, WC | en_US |
dc.contributor.author | Lu, CH | en_US |
dc.contributor.author | Lee, YC | en_US |
dc.date.accessioned | 2014-12-08T15:18:32Z | - |
dc.date.available | 2014-12-08T15:18:32Z | - |
dc.date.issued | 2005-09-01 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/16/9/018 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13340 | - |
dc.description.abstract | Recombination dynamics of photoluminescence (PL) in colloidal CdSe/ZnS quantum dots (QDs) were studied using time-resolved PL measurements. The PL intensity shows a biexponential decay at 9 K, consisting of a fast component (similar to 1 ns) and a slow component (similar to 6.3 ns). Based on the emission-energy and temperature dependence of carrier lifetimes, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs originates from recombination of the delocalized carriers in the internal core states and the localized carriers at the interface, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Recombination dynamics of luminescence in colloidal CdSe/ZrS quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/16/9/018 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 16 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 1517 | en_US |
dc.citation.epage | 1521 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000232089500018 | - |
dc.citation.woscount | 34 | - |
顯示於類別: | 期刊論文 |