完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHao, Chia-Kanen_US
dc.contributor.authorTsai, Chia-Fenen_US
dc.contributor.authorLee, Chi-Shenen_US
dc.date.accessioned2017-04-21T06:56:29Z-
dc.date.available2017-04-21T06:56:29Z-
dc.date.issued2016-05en_US
dc.identifier.issn0928-0707en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10971-015-3951-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/133411-
dc.description.abstractPerovskite compound LaCr1-x Ti (x) O3+0.5x (x = 0-0.15) was synthesized from an EDTA-chelating precursor solution at T < 800 A degrees C, a temperature lower than that of the conventional solid-state method. Structural properties were determined at room temperature using X-ray powder diffraction and the lattice parameter decreased with increasing proportion of Ti. LaCr1-x Ti (x) O3+0.5x was chemically stable under a H-2 atmosphere at 900 A degrees C. Both electrical and ionic conductivity increased with increasing proportion of doped Ti, indicative of a p-type semiconductor. An Arrhenius-like behavior was observed, and the optimized bulk electrical conductivity was 0.107 S cm(-1) for LaCr0.85Ti0.15O3.075 at 850 A degrees C. X-ray photoelectron spectra indicate that the effect of the concentration of charge carrier on conductivity is closely related to the oxidation states of ions. The maximum power density reaches as high as 210 mW cm(-2) at 800 A degrees C for SOFC with LaCr1-x Ti (x) O3+0.5x (x = 0.15) anode. Ti-substituted perovskite materials LaTi (x) Cr1-x O3+0.5x (x = 0-0.15) show enhanced electronic and ionic conductivity with increasing proportion of doped Ti. [GRAPHICS]en_US
dc.language.isoen_USen_US
dc.subjectPerovskiteen_US
dc.subjectSOFCen_US
dc.subjectLaCrO3en_US
dc.subjectIonic conductivityen_US
dc.subjectElectronic conductivityen_US
dc.subjectImpedance spectraen_US
dc.titleEffect of Ti substitution on the electrochemical properties of LaCr1-x Ti (x) O3+0.5x (x=0-0.15)en_US
dc.identifier.doi10.1007/s10971-015-3951-6en_US
dc.identifier.journalJOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGYen_US
dc.citation.volume78en_US
dc.citation.issue2en_US
dc.citation.spage394en_US
dc.citation.epage402en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000372875200020en_US
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