標題: Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
作者: Chen, Ching-En
Chang, Ting-Chang
You, Bo
Tsai, Jyun-Yu
Lo, Wen-Hung
Ho, Szu-Han
Liu, Kuan-Ju
Lu, Ying-Hsin
Liu, Xi-Wen
Hung, Yu-Ju
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Lu, Ching-Sen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Random telegraph signal (RTS);HfO2;Hf1-xZrxO2;multiphonon emission theory;relaxation energy;metal-oxide-semiconductor field-effect transistors (MOSFETs)
公開日期: 四月-2016
摘要: This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf(1-x)ZrxO(2)/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf(1-x)ZrxO(2)).
URI: http://dx.doi.org/10.1109/LED.2016.2535900
http://hdl.handle.net/11536/133430
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2535900
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 4
起始頁: 359
結束頁: 362
顯示於類別:期刊論文