標題: | Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics |
作者: | Chen, Ching-En Chang, Ting-Chang You, Bo Tsai, Jyun-Yu Lo, Wen-Hung Ho, Szu-Han Liu, Kuan-Ju Lu, Ying-Hsin Liu, Xi-Wen Hung, Yu-Ju Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Lu, Ching-Sen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Random telegraph signal (RTS);HfO2;Hf1-xZrxO2;multiphonon emission theory;relaxation energy;metal-oxide-semiconductor field-effect transistors (MOSFETs) |
公開日期: | 四月-2016 |
摘要: | This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf(1-x)ZrxO(2)/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf(1-x)ZrxO(2)). |
URI: | http://dx.doi.org/10.1109/LED.2016.2535900 http://hdl.handle.net/11536/133430 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2535900 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
Issue: | 4 |
起始頁: | 359 |
結束頁: | 362 |
顯示於類別: | 期刊論文 |