標題: | Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination |
作者: | Yang, Zhao Meng, Ting Zhang, Qun Shieh, Han-Ping D. 光電工程學系 Department of Photonics |
關鍵字: | Illumination stability;indium-tungstenoxide (IWO);thin-film transistors (TFTs) |
公開日期: | 四月-2016 |
摘要: | Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations. |
URI: | http://dx.doi.org/10.1109/LED.2016.2524417 http://hdl.handle.net/11536/133432 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2524417 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
Issue: | 4 |
起始頁: | 437 |
結束頁: | 440 |
顯示於類別: | 期刊論文 |