標題: Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination
作者: Yang, Zhao
Meng, Ting
Zhang, Qun
Shieh, Han-Ping D.
光電工程學系
Department of Photonics
關鍵字: Illumination stability;indium-tungstenoxide (IWO);thin-film transistors (TFTs)
公開日期: 四月-2016
摘要: Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.
URI: http://dx.doi.org/10.1109/LED.2016.2524417
http://hdl.handle.net/11536/133432
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2524417
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 4
起始頁: 437
結束頁: 440
顯示於類別:期刊論文