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dc.contributor.authorChen, Yi-Jungen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChang, Chun-Yien_US
dc.date.accessioned2017-04-21T06:56:48Z-
dc.date.available2017-04-21T06:56:48Z-
dc.date.issued2016-04en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2532465en_US
dc.identifier.urihttp://hdl.handle.net/11536/133440-
dc.description.abstractIn this paper, we investigate the response time of oxygen vacancies on the hysteresis for the amorphous indium-gallium-zinc oxide thin-film transistors. The fast pulse measurement method is used to observe the drain current under the different sweeping speeds of gate voltage to clarify the mechanism of the hysteresis. Effects of light intensity and temperature are also discussed. Based on the results and the analysis, the model of oxygen vacancies is proposed to explain the effect of sweep speed on the hysteresis, which would be important for the devices to be driven in their circuit application.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous indium-gallium-zinc oxide (a-IGZO)en_US
dc.subjecthysteresisen_US
dc.subjectresponse timeen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleMechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurementen_US
dc.identifier.doi10.1109/TED.2016.2532465en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue4en_US
dc.citation.spage1565en_US
dc.citation.epage1571en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000373063800024en_US
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