完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, Pei-Yuen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.date.accessioned2017-04-21T06:55:47Z-
dc.date.available2017-04-21T06:55:47Z-
dc.date.issued2016-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2015.2501829en_US
dc.identifier.urihttp://hdl.handle.net/11536/133447-
dc.description.abstractTunnel field-effect transistor (FET) is a promising candidate in ultralow-power applications due to its distinct operation mechanism, namely band-to-band tunneling (BTBT). The integration of different low-bandgap materials is explored extensively to improve the ON-state BTBT current of the tunnel FETs. The epitaxial tunnel layer (ETL) tunnel FET integrated with the hetero-material system is a promising structure due to its process compatibility with CMOS technologies. In the scenario of n-channel operation, the concept of the suppression of the low electric field BTBT is proposed. The SiGe/Si hetero-material system is applied to the n-channel ETL tunnel FET to suppress the low electric field BTBT by the ETL band engineering. The optimized ETL tunnel FET exhibits a high ON-state BTBT current due to the low bandgap material in the ETL. The average SS behavior is also further improved by suppressing the low electric field BTBT. In this study, the design concept and the device parameters of the n-channel ETL tunnel FET are discussed in detail. The performances of the complementary ETL tunnel FETs using the SiGe/Si hetero-material system are also provided to enrich the value of the ETL tunnel FET in the circuit applications.en_US
dc.language.isoen_USen_US
dc.subjectBand engineeringen_US
dc.subjectband to band tunnelingen_US
dc.subjectsubthreshold swing (SS)en_US
dc.subjecttunnel field-effect transistoren_US
dc.titleBand Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structureen_US
dc.identifier.doi10.1109/TNANO.2015.2501829en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume15en_US
dc.citation.issue1en_US
dc.citation.spage74en_US
dc.citation.epage79en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000367984600008en_US
顯示於類別:期刊論文