Site-specific growth to control ZnO nanorods density and related field emission properties

doi:10.1016/j.ssc.2005.04.009

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DC 欄位	值	語言
dc.contributor.author	Chang, CC	en_US
dc.contributor.author	Chang, CS	en_US
dc.date.accessioned	2014-12-08T15:18:33Z	-
dc.date.available	2014-12-08T15:18:33Z	-
dc.date.issued	2005-09-01	en_US
dc.identifier.issn	0038-1098	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.ssc.2005.04.009	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13350	-
dc.description.abstract	Uniformly distributed ZnO nanorods with two different densities were demonstrated using the standard submicron semiconductor process. Plasma-enhanced chemical vapor deposition and UV-lithography were used to predefine growth sites and to grow ZnO nanorods at 600 degrees C. Integrated and local field emission (FE) experiments were also performed in the same substrate, and both involved the F-N vacuum tunneling mechanism. A medium density of high aspect ratio nanorods shows better FE performance due to the screening effect. The ability to control the growth-site demonstrated the possibility of the integration and the better field emission properties of nanodevices by ZnO on silicon substrate. (C) 2005 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	ZnO nanorods	en_US
dc.subject	density	en_US
dc.subject	F-N tunnel	en_US
dc.subject	field emission	en_US
dc.subject	site-specific	en_US
dc.title	Site-specific growth to control ZnO nanorods density and related field emission properties	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.ssc.2005.04.009	en_US
dc.identifier.journal	SOLID STATE COMMUNICATIONS	en_US
dc.citation.volume	135	en_US
dc.citation.issue	11-12	en_US
dc.citation.spage	765	en_US
dc.citation.epage	768	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000231577600023	-
dc.citation.woscount	17	-
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