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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorHuang, Bo-Wenen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChang, Ting-Chiaen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.date.accessioned2017-04-21T06:56:46Z-
dc.date.available2017-04-21T06:56:46Z-
dc.date.issued2016-03en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2015.2459077en_US
dc.identifier.urihttp://hdl.handle.net/11536/133510-
dc.description.abstractThis study is the first to investigate different reliability mechanisms of high-performance low-temperature polycrystalline silicon thin-film transistors (TFTs) with a HfO2 gate dielectric before and after dual plasma treatment (DPT) under various bias temperature instability (BTI) stresses. DPT samples under positive bias temperature instability (PBI) and negative bias temperature instability (NBI) stresses exhibited different degradation phenomena because of the negative polarity trapped oxide charges and positive fixed oxide charges (Si+), respectively. In addition, experimental data exhibited better reliability immunity for PBI stress than NBI stress after DPT. Furthermore, we raised the temperature to clearly observe the effect of the PBTI stress analysis for samples with and without DPT. Extracted measurement results showed distinct time evolutions of the interface state densities (Nit) for samples with and without DPT, revealing the different mechanisms of Nit generation with and without DPT. Finally, we proposed a novel reliability mechanism called the quasi reaction-diffusion model to explain the generation of Delta N-it, which also explains the unclear phenomena of mobility boost.en_US
dc.language.isoen_USen_US
dc.subjectBias temperature instability (BTI) stressen_US
dc.subjectdual plasma treatment (DPT)en_US
dc.subjectlow-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs)en_US
dc.subjectquasi-reaction-diffusion (quasi R-D) modelen_US
dc.subjectreliabilityen_US
dc.titleBias Temperature Instabilities for High-kappa HfO2 LTPS-TFTs With Dual Plasma Treatmenten_US
dc.identifier.doi10.1109/JDT.2015.2459077en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue3en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000372422900006en_US
Appears in Collections:Articles