標題: | Bias Temperature Instabilities for High-kappa HfO2 LTPS-TFTs With Dual Plasma Treatment |
作者: | Wu, Chien-Hung Huang, Bo-Wen Chang, Kow-Ming Chang, Ting-Chia Wang, Shui-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Bias temperature instability (BTI) stress;dual plasma treatment (DPT);low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs);quasi-reaction-diffusion (quasi R-D) model;reliability |
公開日期: | 三月-2016 |
摘要: | This study is the first to investigate different reliability mechanisms of high-performance low-temperature polycrystalline silicon thin-film transistors (TFTs) with a HfO2 gate dielectric before and after dual plasma treatment (DPT) under various bias temperature instability (BTI) stresses. DPT samples under positive bias temperature instability (PBI) and negative bias temperature instability (NBI) stresses exhibited different degradation phenomena because of the negative polarity trapped oxide charges and positive fixed oxide charges (Si+), respectively. In addition, experimental data exhibited better reliability immunity for PBI stress than NBI stress after DPT. Furthermore, we raised the temperature to clearly observe the effect of the PBTI stress analysis for samples with and without DPT. Extracted measurement results showed distinct time evolutions of the interface state densities (Nit) for samples with and without DPT, revealing the different mechanisms of Nit generation with and without DPT. Finally, we proposed a novel reliability mechanism called the quasi reaction-diffusion model to explain the generation of Delta N-it, which also explains the unclear phenomena of mobility boost. |
URI: | http://dx.doi.org/10.1109/JDT.2015.2459077 http://hdl.handle.net/11536/133510 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2015.2459077 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 12 |
Issue: | 3 |
顯示於類別: | 期刊論文 |