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dc.contributor.authorKang, Ji-Hoonen_US
dc.contributor.authorJung, Soon-Gilen_US
dc.contributor.authorLee, Sangyunen_US
dc.contributor.authorPark, Eunsungen_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorChareev, Dmitriy A.en_US
dc.contributor.authorVasiliev, Alexander N.en_US
dc.contributor.authorPark, Tusonen_US
dc.date.accessioned2017-04-21T06:56:07Z-
dc.date.available2017-04-21T06:56:07Z-
dc.date.issued2016-03en_US
dc.identifier.issn0953-2048en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-2048/29/3/035007en_US
dc.identifier.urihttp://hdl.handle.net/11536/133519-
dc.description.abstractWe investigate the pressure dependence of the upper critical fields (mu H-0(c2)) for FeSe single crystals with pressure up to 2.57 GPa. The superconducting (SC) properties show a disparate behavior across a critical pressure where the pressure-induced antiferromagnetic phase coexists with superconductivity. The magnetoresistance for H//ab and H//c is very different: for H//c, magnetic field induces and enhances a hump in the resistivity close to the T-c for pressures higher than 1.2 GPa, while it is absent for H//ab. Since the measured mu H-0(c2) for FeSe samples is smaller than the orbital limited upper critical field (H-c2(orb)) estimated by the Werthamer, Helfand and Hohenberg model, the Maki parameter (alpha) related to Pauli spin-paramagnetic effects is additionally considered to describe the temperature dependence of mu H-0(c2)(T). Interestingly, the alpha value is hardly affected by pressure for H//ab, while it strongly increases with pressure for H//c. The pressure evolution of the mu H-0(c2)(0) for the FeSe single crystals is found to be almost similar to that of T-c(P), suggesting that the pressure-induced magnetic order adversely affects the upper critical fields as well as the SC transition temperature.en_US
dc.language.isoen_USen_US
dc.subjectFeSeen_US
dc.subjectupper critical fielden_US
dc.subjectpressureen_US
dc.subjectMaki parameteren_US
dc.titlePressure dependence of upper critical fields in FeSe single crystalsen_US
dc.identifier.doi10.1088/0953-2048/29/3/035007en_US
dc.identifier.journalSUPERCONDUCTOR SCIENCE & TECHNOLOGYen_US
dc.citation.volume29en_US
dc.citation.issue3en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000371973100019en_US
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