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dc.contributor.authorYang, Zih-Yingen_US
dc.contributor.authorChen, Yi-Hsunen_US
dc.contributor.authorLiao, Bo-Hueien_US
dc.contributor.authorChen, Kuo-Pingen_US
dc.date.accessioned2019-04-03T06:42:04Z-
dc.date.available2019-04-03T06:42:04Z-
dc.date.issued2016-02-01en_US
dc.identifier.issn2159-3930en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OME.6.000540en_US
dc.identifier.urihttp://hdl.handle.net/11536/133538-
dc.description.abstractHigh-power impulse magnetron sputtering (HiPIMS) was used to deposit titanium nitride (TiN) thin films with high electron density as alternative plasmonic materials. TiN thin films with thicknesses of 20-40 nm were deposited with different average sputtering powers, and exhibited metallic-and dielectric-like optical properties. When the sputtering power was increased from 80 W to 300 W, denser polycrystalline TiN thin films were obtained at room temperature (RT) with a conductivity 25 times that of the low-sputtering-power film. With sufficient average power (>= 180 W), the films exhibited metallic-like optical properties, and a conductivity of >10(5) S/m. By using HiPIMS deposition, good-quality metallic-like TiN thin films could be fabricated at RT without heating the substrate. (C) 2016 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleRoom temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OME.6.000540en_US
dc.identifier.journalOPTICAL MATERIALS EXPRESSen_US
dc.citation.volume6en_US
dc.citation.issue2en_US
dc.citation.spage540en_US
dc.citation.epage551en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.identifier.wosnumberWOS:000372039500027en_US
dc.citation.woscount12en_US
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