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dc.contributor.authorChiang, Chien-Hsuehen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2017-04-21T06:56:02Z-
dc.date.available2017-04-21T06:56:02Z-
dc.date.issued2016-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2015.2454951en_US
dc.identifier.urihttp://hdl.handle.net/11536/133567-
dc.description.abstractIn this paper, we propose a novel amorphous silicon gate driver (ASG) circuit with useful driving methods in saving power consumption and improving driving capability as well. Unlike other driving methods that are used to improve the driving capability also increases the power consumption strikingly. In this paper, an ASG circuit with novel driving method is proposed and realized in standard 5-mask hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) process. The circuit consisting of 13 a-Si: H TFTs is used in portable flat-panel displays (FPDs) for the high driving capability and low power characteristic. By comparing other driving methods, the results of the definitive measurement show that the minimum driving high voltage is improved with 2 volts increment and the power consumption increases 9.7% slightly. Moreover, the other dynamic characteristics of the ASG, such as the rise time and fall time of the outputs, can be improved at the same time. To validate the results, the designate circuit is fabricated with 5-mu m a-Si:H TFT process and the experimental results confirm the practicability of achieved design. Three different driving methods are adopted in the same ASG circuit to respond three individual output characteristics.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous silicon gate (ASG) driver circuitsen_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectlow poweren_US
dc.subjectdriving capabilityen_US
dc.subjectminimum driving high voltageen_US
dc.subjectdynamic characteristicen_US
dc.subjectrise timeen_US
dc.subjectfall timeen_US
dc.subjectflat panel display (FPD)en_US
dc.titleLow Power and High Driving Capability of Amorphous Silicon Gate Driver Circuiten_US
dc.identifier.doi10.1109/JDT.2015.2454951en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue1en_US
dc.citation.spage55en_US
dc.citation.epage61en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000372423500002en_US
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