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dc.contributor.authorLu, PHen_US
dc.contributor.authorWu, CYen_US
dc.contributor.authorTsai, MKen_US
dc.date.accessioned2014-12-08T15:02:42Z-
dc.date.available2014-12-08T15:02:42Z-
dc.date.issued1996-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.509855en_US
dc.identifier.urihttp://hdl.handle.net/11536/1335-
dc.description.abstractIn this paper, CMOS inverter-based wideband transresistance R(m) amplifiers are proposed and analyzed. Using the R(m) amplifiers, tunable VHF/UHF R(m)-C bandpass biquadratic filters can be designed. In these filters, the center frequency f(o) can be post-tuned by adjusting the control voltages of the R(m) amplifiers. The pseudodifferential configuration uses the extra inversely connected and self-shorted inverters for Q enhancement. Experimental results have shown that the center frequency f(o) of the single-ended-output R(m)-C bandpass biquad is 386 MHz (258 MHz) and Q = 1.195 (Q = 1.012) for +/-2.5 V (+/-1.5 V) supply voltage. The power consumption is 24.83 mW (3.42 mW), and the dynamic range is 61 dB (55.5 dB). For pseudodifferential-output high-Q configuration, the measured quality factor Q can be as high as 360 with f, = 222.7 MHz. When Q = 94, the power consumption is 56.2 mW and the measured dynamic range is 57.8 dB for +/-2.5 V supply voltage.en_US
dc.language.isoen_USen_US
dc.titleDesign techniques for VHF/UHF high-Q tunable bandpass filters using simple CMOS inverter-based transresistance amplifiersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.509855en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume31en_US
dc.citation.issue5en_US
dc.citation.spage719en_US
dc.citation.epage725en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UM68300012-
dc.citation.woscount19-
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