標題: Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations
作者: Li, GongTan
Yang, Bo-Ru
Liu, Chuan
Lee, Chia-Yu
Wu, Yuan-Chun
Lu, Po-Yen
Deng, ShaoZhi
Shieh, Han-Ping D.
Xu, NingSheng
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: InZnSnO;thin-film transistors;NGBS;nitrogen doping
公開日期: 五月-2016
摘要: The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.
URI: http://dx.doi.org/10.1109/LED.2016.2548020
http://hdl.handle.net/11536/133634
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2548020
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 5
起始頁: 607
結束頁: 610
顯示於類別:期刊論文