標題: | Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations |
作者: | Li, GongTan Yang, Bo-Ru Liu, Chuan Lee, Chia-Yu Wu, Yuan-Chun Lu, Po-Yen Deng, ShaoZhi Shieh, Han-Ping D. Xu, NingSheng 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | InZnSnO;thin-film transistors;NGBS;nitrogen doping |
公開日期: | 五月-2016 |
摘要: | The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs. |
URI: | http://dx.doi.org/10.1109/LED.2016.2548020 http://hdl.handle.net/11536/133634 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2548020 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
Issue: | 5 |
起始頁: | 607 |
結束頁: | 610 |
顯示於類別: | 期刊論文 |