完整後設資料紀錄
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dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorYang, Chun-Chiehen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2017-04-21T06:55:31Z-
dc.date.available2017-04-21T06:55:31Z-
dc.date.issued2016-05en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2016.2545399en_US
dc.identifier.urihttp://hdl.handle.net/11536/133635-
dc.description.abstractThis paper investigates the phenomenon of mode switching for GaAs-based high index contrast photonic crystal surface emitting lasers (PCSELs) with deeply etched air holes. The room-temperature lasing characteristics and angular resolved photoluminescence spectra of PCSELs show that the lasing mode would change from the fundamental guided mode to a high-order guided mode as the filling factor (FF) increased, resulting from the diffraction of deeply etched semiconductor/air arrays with high index contrast. Higher order guided modes could coherently couple out of photonic crystal and would significantly influence the laser output of PCSELs with a larger air FF, leading to rich far-field characteristics.en_US
dc.language.isoen_USen_US
dc.subjectGaAsen_US
dc.subjectphotonic crystalsen_US
dc.subjectguided wavesen_US
dc.titleMode Switching of High Index Contrast Photonic Crystal Surface Emitting Lasersen_US
dc.identifier.doi10.1109/JQE.2016.2545399en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume52en_US
dc.citation.issue5en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000375034200001en_US
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