完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Yu-Tingen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorTing, Yi-Hsinen_US
dc.contributor.authorCheng, Shao-Liangen_US
dc.contributor.authorLiao, Chien-Nengen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2017-04-21T06:55:41Z-
dc.date.available2017-04-21T06:55:41Z-
dc.date.issued2016-04en_US
dc.identifier.issn1998-0124en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s12274-016-0998-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/133667-
dc.description.abstractElectromigration in Cu has been extensively investigated as the root cause of typical breakdown failure in Cu interconnects. In this study, Cu nanowires connected to Au electrodes are fabricated and observed using in situ transmission electron microscopy to investigate the electro- and thermo-migration processes that are induced by direct current sweeps. We observe the dynamic evolution of different mass transport mechanisms. A current density on the order of 10(6) A/cm(2) and a temperature of approximately 400 A degrees C are sufficient to induce electro- and thermo-migration, respectively. Observations of the migration processes activated by increasing temperatures indicate that the migration direction of Cu atoms is dependent on the net force from the electric field and electron wind. This work is expected to support future design efforts to improve the robustness of Cu interconnects.en_US
dc.language.isoen_USen_US
dc.subjectCu interconnecten_US
dc.subjectnanowiresen_US
dc.subjectelectromigrationen_US
dc.subjectthermomigrationen_US
dc.subjectmass transporten_US
dc.subjecthigh current densityen_US
dc.titleMass transport phenomena in copper nanowires at high current densityen_US
dc.identifier.doi10.1007/s12274-016-0998-9en_US
dc.identifier.journalNANO RESEARCHen_US
dc.citation.volume9en_US
dc.citation.issue4en_US
dc.citation.spage1071en_US
dc.citation.epage1078en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000375081400018en_US
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