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dc.contributor.authorChou, Ta-Leien_US
dc.contributor.authorTewari, Girish C.en_US
dc.contributor.authorSrivastava, Divyaen_US
dc.contributor.authorYamamoto, Atsushien_US
dc.contributor.authorChan, Ting-Shanen_US
dc.contributor.authorHsu, Ying-Yaen_US
dc.contributor.authorChen, Jin-Mingen_US
dc.contributor.authorYamauchi, Hisaoen_US
dc.contributor.authorKarppinen, Maariten_US
dc.date.accessioned2017-04-21T06:55:56Z-
dc.date.available2017-04-21T06:55:56Z-
dc.date.issued2016-07-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2016.03.045en_US
dc.identifier.urihttp://hdl.handle.net/11536/133726-
dc.description.abstractModerately-doped BiOCuSe-based materials are actively investigated worldwide as new promising candidates for intermediate-temperature thermoelectric power generation. Here we explain for two differently doped BiOCuSe materials, i.e. Cu-deficient BiOCu1-xSe and Ca-for-Bi substituted (Bi1-yCay) OCuSe systems, the differences in their efficacies to enhance the thermoelectric performance of the pristine BiOCuSe material using theoretical calculations and x-ray absorption spectroscopy (XAS) at various edges. In the Cu-deficient system the doping dominantly induces an oxide layer-to-selenide layer charge transfer process. On the other hand, the Ca-for-Bi substitution not only gives lower electrical resistivity but also better thermal stability thanks to the increased ionic bonding character in the selenide block. Density of states nearby the Fermi level suggests that even though the Bi-Se distance is much longer than the Bi-O bond, its contribution cannot be ruled out. The Se-Bi-O chain contributes to the hole states at the VBM with the Cu 3d - Se 4p antibonding state. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectOxidesen_US
dc.subjectChalcogenidesen_US
dc.subjectMultilayersen_US
dc.subjectXAFSen_US
dc.subjectBand-structureen_US
dc.subjectThermoelectric effectsen_US
dc.titleEfficacies of dopants in thermoelectric BiOCuSeen_US
dc.identifier.doi10.1016/j.matchemphys.2016.03.045en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume177en_US
dc.citation.spage73en_US
dc.citation.epage78en_US
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000376695400011en_US
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