标题: A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAM
作者: Berco, Dan
Tseng, Tseung-Yuen
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Resistive switching memory (RRAM);ZrO2;Numerical simulation;Metal insulator metal (MIM);Nonvolatile memory (NVM)
公开日期: 六月-2016
摘要: The authors investigate the conduction filament (CF) formation voltage and reset polarity dependence of a Ti/Zr/Pt resistive switching memory device on the Ti top electrode (TE) thickness by means of numerical simulation. A calculation method which accounts for both the initial statistical nature of the resistive switching layer (RSL) and the interaction of oxygen vacancies with oxygen species (O) on the overall conductance is used. The results show a correlation between the TE thickness and the density profile of O species both along the RSL-TE interface and within the TE, and indentify the causes for the previously observed not yet fully comprehended TE thickness dependent functionality of this device. The authors demonstrate that accumulation and reduction of O, during forming, result in a charged interfacial layer which decreases the effective oxide thickness and determines the forming voltage and switching polarity. In addition, local temperature profiles within the CF during forming promote O diffusion into the TE material which reduces the local conductivity and affects the forming voltage magnitude as well. In addition the authors provide forming and reset calculations for TE thicknesses of 5, 20 and 40 nm which are in good agreement with published experimental data.
URI: http://dx.doi.org/10.1007/s10825-015-0783-0
http://hdl.handle.net/11536/133756
ISSN: 1569-8025
DOI: 10.1007/s10825-015-0783-0
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 15
Issue: 2
起始页: 595
结束页: 601
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