標題: Impacts of Co doping on ZnO transparent switching memory device characteristics
作者: Simanjuntak, Firman Mangasa
Prasad, Om Kumar
Panda, Debashis
Lin, Chun-An
Tsai, Tsung-Ling
Wei, Kung-Hwa
Tseng, Tseung-Yuen
材料科學與工程學系
資訊工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Computer Science
Department of Electronics Engineering and Institute of Electronics
公開日期: 2-May-2016
摘要: The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4948598
http://hdl.handle.net/11536/133783
ISSN: 0003-6951
DOI: 10.1063/1.4948598
期刊: APPLIED PHYSICS LETTERS
Volume: 108
Issue: 18
Appears in Collections:Articles