標題: | Impacts of Co doping on ZnO transparent switching memory device characteristics |
作者: | Simanjuntak, Firman Mangasa Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen 材料科學與工程學系 資訊工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Computer Science Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2-五月-2016 |
摘要: | The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4948598 http://hdl.handle.net/11536/133783 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4948598 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 108 |
Issue: | 18 |
顯示於類別: | 期刊論文 |