標題: High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
作者: Chiu, Yu Sheng
Liao, Jen Ting
Lin, Yueh Chin
Liu, Shin Chien
Lin, Tai Ming
Iwai, Hiroshi
Kakushima, Kuniyuki
Chang, Edward Yi
材料科學與工程學系
影像與生醫光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Imaging and Biomedical Photonics
Department of Electronics Engineering and Institute of Electronics
公開日期: 五月-2016
摘要: High-kappa cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D-it) was calculated to be 5.5 x 10(11) eV(-1)cm(-2) at 150 degrees C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I-ON/I-OFF) of 1.14 X 10(9), and a low gate leakage current density (J(leakage)) of 2.85 X 10(-9)Acm(-2) with an improved dynamic ON-resistance (R-ON), which is about one order of magnitude lower than that of a conventional HEMT. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.051001
http://hdl.handle.net/11536/133800
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.051001
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
Issue: 5
顯示於類別:期刊論文