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dc.contributor.authorChou, Yu-Hsunen_US
dc.contributor.authorWu, Yen-Moen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorChou, Bo-Tsunen_US
dc.contributor.authorShih, Jheng-Hongen_US
dc.contributor.authorChung, Yi-Chengen_US
dc.contributor.authorChen, Peng-Yuen_US
dc.contributor.authorLin, Tzy-Rongen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2017-04-21T06:55:21Z-
dc.date.available2017-04-21T06:55:21Z-
dc.date.issued2016-05en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.6b00537en_US
dc.identifier.urihttp://hdl.handle.net/11536/133803-
dc.description.abstractThe recent development of plasmonics has overcome the optical diffraction limit and fostered the development of several important components including nanolasers, low-operation-power modulators, and high-speed detectors. In particular, the advent of surface-plasmon-polariton (SPP) nanolasers has enabled the development of coherent emitters approaching the nanoscale. SPP nanolasers widely adopted metal insulator semiconductor structures because the presence of an insulator can prevent large metal loss. However, the insulator is not necessary if permittivity combination of laser structures is properly designed. Here, we experimentally demonstrate a SPP nanolaser with a ZnO nanowire on the as-grown single-crystalline aluminum. The average lasing threshold of this simple structure is 20 MW/cm(2), which is four-times lower than that of structures with additional insulator layers. Furthermore, single-mode laser operation can be sustained at temperatures up to 353 K. Our study represents a major step toward the practical realization of SPP nanolasers.en_US
dc.language.isoen_USen_US
dc.subjectNanolaseren_US
dc.subjectsurface plasmonen_US
dc.subjectZnOen_US
dc.subjectnanowireen_US
dc.subjectaluminumen_US
dc.titleHigh-Operation-Temperature Plasmonic Nanolasers on Single-Crystalline Aluminumen_US
dc.identifier.doi10.1021/acs.nanolett.6b00537en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue5en_US
dc.citation.spage3179en_US
dc.citation.epage3186en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000375889700043en_US
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