標題: | Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate |
作者: | Liu, Hsi-Wen Chang, Ting-Chang Tsai, Jyun-Yu Chen, Ching-En Liu, Kuan-Ju Lu, Ying-Hsin Lin, Chien-Yu Tseng, Tseung-Yuen Cheng, Osbert Huang, Cheng-Tung Ye, Yi-Han 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 25-四月-2016 |
摘要: | This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4947439 http://hdl.handle.net/11536/133806 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4947439 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 108 |
Issue: | 17 |
顯示於類別: | 期刊論文 |