High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

doi:10.1063/1.4948251

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Di-Cheng	en_US
dc.contributor.author	Pan, You-Wei	en_US
dc.contributor.author	Wu, Jenq-Shinn	en_US
dc.contributor.author	Lin, Shih-Wei	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2017-04-21T06:55:22Z	-
dc.date.available	2017-04-21T06:55:22Z	-
dc.date.issued	2016-04-25	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4948251	en_US
dc.identifier.uri	http://hdl.handle.net/11536/133807	-
dc.description.abstract	We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Omega/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications. Published by AIP Publishing.	en_US
dc.language.iso	en_US	en_US
dc.title	High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate	en_US
dc.identifier.doi	10.1063/1.4948251	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	108	en_US
dc.citation.issue	17	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000375846600024	en_US
顯示於類別：	期刊論文