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dc.contributor.authorChen, Shuo-Weien_US
dc.contributor.authorLi, Hengen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2019-04-03T06:42:46Z-
dc.date.available2019-04-03T06:42:46Z-
dc.date.issued2016-04-01en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4947299en_US
dc.identifier.urihttp://hdl.handle.net/11536/133816-
dc.description.abstractThe crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.language.isoen_USen_US
dc.titleImproved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4947299en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume6en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000375845100079en_US
dc.citation.woscount8en_US
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