標題: | Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers |
作者: | Chen, Shuo-Wei Li, Heng Lu, Tien-Chang 光電工程學系 Department of Photonics |
公開日期: | 1-四月-2016 |
摘要: | The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
URI: | http://dx.doi.org/10.1063/1.4947299 http://hdl.handle.net/11536/133816 |
ISSN: | 2158-3226 |
DOI: | 10.1063/1.4947299 |
期刊: | AIP ADVANCES |
Volume: | 6 |
Issue: | 4 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |