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dc.contributor.authorMi, Chun-Weien_US
dc.contributor.authorChin, Yi-Yingen_US
dc.contributor.authorHsiao, Yen-Fuen_US
dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorUen, Tzeng-Mingen_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorLin, Hong-Jien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2017-04-21T06:56:31Z-
dc.date.available2017-04-21T06:56:31Z-
dc.date.issued2016-09-01en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/28/34/345501en_US
dc.identifier.urihttp://hdl.handle.net/11536/133863-
dc.description.abstractThe electronic structure and magnetic properties of SrMn0.5Fe0.5O3 powder and films grown on (100)-SrTiO3 (STO) and (100)-LaAlO3 (LAO) substrates by pulsed laser deposition (PLD) were investigated by temperature dependent magnetization and soft x-ray absorption. The results exhibit characteristics of 3d(5) Fe3+, 3d(5) (L) under bar Fe4+, and 3d(3) + 3d(4) (L) under bar Mn4+ at room temperature in all samples. However, the features of 3d(5) Fe3+ and 3d(3) Mn4+ increased significantly for SMFO/LAO at 35 K, which also displayed substantial competition between antiferromagnetic and ferromagnetic order well-above the Neel temperature of SrFeO3 (T-N similar to 134 K). We attributed this to being caused by charge disproportionation resulting from ligand-hole localization, which is more favorable to take place when the sample is under compressive strain.en_US
dc.language.isoen_USen_US
dc.subjectstrongly correlated systemen_US
dc.subjectstrain effecten_US
dc.subjectx-ray absorption spectroscopyen_US
dc.subjectspin-glassen_US
dc.subjectcharge disproportionationen_US
dc.titleEffects of strain on the electronic structure and magnetic properties in SrMn0.5Fe0.5O3en_US
dc.identifier.doi10.1088/0953-8984/28/34/345501en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume28en_US
dc.citation.issue34en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000379555600012en_US
Appears in Collections:Articles