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dc.contributor.authorChen, Meng-Chuen_US
dc.contributor.authorCheng, Yung-Chenen_US
dc.contributor.authorHuang, Chun-Yuanen_US
dc.contributor.authorWang, Hsiang-Chenen_US
dc.contributor.authorLin, Kuang-Ien_US
dc.contributor.authorYang, Zu-Poen_US
dc.date.accessioned2017-04-21T06:56:32Z-
dc.date.available2017-04-21T06:56:32Z-
dc.date.issued2016-09en_US
dc.identifier.issn0022-2313en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jlumin.2016.04.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/133867-
dc.description.abstractFirst two to five barriers in the growth sequence having silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) on twenty pairs of In0.02Ga0.98N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs. (c) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInGaN/GaN quantum wells (QWs)en_US
dc.subjectSilicon (Si) dopingen_US
dc.subjectSoft confinement potentialen_US
dc.subjectQuantum-confined Stark effect (QCSE)en_US
dc.subjectAuger processesen_US
dc.subjectExternal quantum efficiency (EQE)en_US
dc.titleThe action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDsen_US
dc.identifier.doi10.1016/j.jlumin.2016.04.010en_US
dc.identifier.journalJOURNAL OF LUMINESCENCEen_US
dc.citation.volume177en_US
dc.citation.spage59en_US
dc.citation.epage64en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000377997700009en_US
Appears in Collections:Articles